Odisha signs Intel, 3DGS semiconductor MoU
The proposed USD 3.3 bn facility would make glass-core and high-density interconnect substrates for advanced semiconductor packaging
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The proposed USD 3.3 bn facility would make glass-core and high-density interconnect substrates for advanced semiconductor packaging
The tie-up gives India’s first commercial 300 mm fab a direct link to one of the chip industry’s most important…
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The modules will be produced at Tata Electronics’ OSAT facility
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